Amorphization of Si using cluster ions
نویسندگان
چکیده
Amorphization process associated with cluster implants has been studied by cross-sectional transmission electron microscopy for P4 cluster implants !5 keV equivalent monomer energy" as a function of dose and compared to that of monomer P implant at the same equivalent energy. Amorphous pockets are formed by the cluster implant at doses of as low as 6!1013 /cm2, and a continuous amorphous layer is formed at dose of 2!1014 /cm2. The reduction by about 2.5 times in amorphization threshold by clusters with respect to the monomer implant is a consequence of the simultaneous deposition of energy carried by the atoms in the clusters, which enhances the damage yield in the overlapped collision cascades. © 2009 American Vacuum Society. #DOI: 10.1116/1.3089372$
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